page . 1 november 24,2009-rev.00 pjp840 / PJF840 fea tures ? 8a , 500v, r ds(on) =0.9 @v gs =10v, i d =4a ? low on resistance ? fa st switching ? low gate charge ? fully chara cterized a vala nche v oltage a nd current ? spe ci ally de sigened f or ac ada pter , battery charge a nd smps ? in compli a nce with eu rohs 2002/95/ec dire ctives mechanical da ta ? ca se: t o-220ab / it o-220ab molded pla stic ? t ermin als : soldera ble per mil-st d-750,method 2026 or dering informa tion 500v n-channel enhancement mode mosfet m axi mum ra tings a nd thermal chara cteristics (t a =25 o c unle ss otherwise noted ) note: 1. m axi mum dc current li mited by the pa ck age p an jit reser ves the right t o improve product design,functions and reliability without notice gate drain source to-220ab / ito-220ab to-220ab ito-220ab internal schematic diagram type marking package packing pjp840 p840 to -220ab 50pcs/tube PJF840 f840 ito-220ab 50pcs/tube 1 2 3 g d s 1 2 3 g d s pa ra m e te r s ym b o l p j p 8 4 0 p j f 8 4 0 uni ts d r a i n- s o ur c e vo lta g e v d s 5 0 0 v ga te - s o ur c e vo lta g e v gs + 3 0 v c o nti nuo us d ra i n c ur re nt i d 8 8 a p uls e d d r a i n c urr e nt 1 ) i d m 3 2 3 2 a m a x i m um p o we r d i s s i p a ti o n d e ra ti ng f a c to r t a =2 5 o c p d 1 2 5 1 .0 4 5 0 . 3 6 w op e ra ti ng j unc t i o n a nd s to ra g e te m p e r a ture ra ng e t j ,t s tg -5 5 to +1 5 0 o c avala nche energy with single pulse i as =8.0a, vdd=72v, l=14mh e a s 5 1 4 m j junc tion-to-case thermal resistance r j c 1 .0 2 . 7 8 o c / w junct ion-to ambient thermal resistance r j a 6 2 .5 1 0 0 o c /w
page . 2 pjp840 / PJF840 electrical characteristics ( t a =25 o c unless otherwise noted ) note : plus te st : pluse w idth < 300us, duty cycle < 2%. p a r a m e te r s ymb o l te s t c o nd i ti o n m i n. typ . ma x. uni ts s ta ti c d r a i n- s o urc e b re a k d o wn vo lta g e b v d s s v gs =0 v, i d =2 5 0 ua 5 0 0 - - v ga te t hre s ho ld vo lta g e v gs (th) v d s =v gs , i d =2 5 0 ua 2 .0 - 4 .0 v d r a i n- s o ur c e on- s ta t e re s i s ta nc e r d s ( o n) v gs = 10v, i d = 4a - 0.62 0.9 ze r o g a te vo lta g e d r a i n c ur r e nt i d s s v ds =500v, v gs =0v - - 10 ua gate b ody leakage i gs s v gs = + 3 0 v, v d s =0 v - - + 1 0 0 n dynamic to ta l ga te c ha r g e q g v d s =4 0 0 v, i d =8 a v gs =1 0 v - 3 1 .5 - nc ga te - s o ur c e c ha rg e q g s - 5 .9 - ga te - d r a i n c ha r g e q g d - 13.4 - tur n- o n d e la y ti me t d (o n) v dd =250v , i d =8a v gs =10v , r g =25 - 18.8 26 ns tur n- on ri s e ti m e t r - 32.6 42 tur n- o ff d e la y ti me t d (o ff) - 8 4 .8 11 0 tur n- o ff f a ll ti m e t f - 4 5 .2 6 0 inp ut c a p a c i ta nc e c i s s v d s =2 5 v, v gs =0 v f=1 .0 m h z - 11 0 0 1 3 6 0 p f outp u t c a p a c i t a nc e c o s s - 115 150 re ve r s e tra ns f e r c a p a c i ta nc e c rs s - 7.8 10 s o urc e - d ra i n d i o d e ma x. d i o d e f o rwa rd c urr e nt i s - - - 8 .0 a ma x.p u ls e d s o ur c e c urr e nt i s m - - - 3 2 a d i o d e f o r wa r d vo lta g e v s d i s =8 a , v gs =0 v - - 1 .5 v re ve r s e re c o ve r y ti m e t r r v gs =0 v, i f =8 a d i /d t= 1 0 0 a /us - 2 7 0 - ns re ve r s e re c o ve r y c ha r g e q rr - 1 . 8 9 - uc november 24,2009-rev.00
pjp840 / PJF840 typical characteristics curves ( ta=25 , unle s s otherwise noted) 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 25 30 i d - drain-to-source current (a) v ds - drain-to-source voltage (v) v gs = 20v~ 7.0v 5.0v 6.0v 0.1 1 10 2 3 4 5 6 7 8 i d - drain source current (a) v gs - gate-to-source voltage (v) v ds =50v t j = 125 o c 25 o c - 55 o c fig.1 output characteristric fig.2 transfer characteristric 0.5 0.6 0.7 0.8 0 . 9 1 0 2 4 6 8 10 r ds(on) - on resistance( ) i d - drain current (a) v gs = 20v vgs=10v 0.5 0.6 0.7 0.8 0 . 9 1 1.1 1.2 2 4 6 8 10 r ds(on) - on resistance( ) v gs - gate-to-source voltage (v) i d =4a t j =25 o c pjp840 / PJF840 typical characteristics curves ( ta=25 , unle s s otherwise noted) fig.3 on resistance vs drain current fig.4 on resistance vs gate to source voltage fig.5 on resistance vs junction temperature fig.6 capacitance page. 3 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 25 30 i d - drain-to-source current (a) v ds - drain-to-source voltage (v) v gs = 20v~ 7.0v 5.0v 6.0v 0 400 800 120 0 1 600 2000 0 5 10 15 20 25 30 c - capacitance (pf) v ds - drain-to-source voltage (v) ciss coss crss f = 1mhz v gs = 0v 0.5 0.7 0.9 1.1 1 . 3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 -50 -25 0 25 50 75 100 125 150 r ds(on) - on-resistance(normalized) t j - junction temperature ( o c) v gs =10 v i d =4.0a 0.1 1 10 2 3 4 5 6 7 8 i d - drain source current (a) v gs - gate-to-source voltage (v) v ds =50v t j = 125 o c 25 o c - 55 o c fig.1 output characteristric fig.2 transfer characteristric 0.5 0.6 0.7 0.8 0 . 9 1 0 2 4 6 8 10 r ds(on) - on resistance( ) i d - drain current (a) v gs = 20v vgs=10v 0.5 0.6 0.7 0.8 0 . 9 1 1.1 1.2 2 4 6 8 10 r ds(on) - on resistance( ) v gs - gate-to-source voltage (v) i d =4a t j =25 o c november 24,2009-rev.00
fig. 7 gate charge waveform pjp840 / PJF840 typical characteristics curves ( ta=25 , unle s s otherwise noted) fig.8 source-drain diode forward voltage 0.8 0.9 1 1.1 1.2 - 5 0 -25 0 25 50 75 100 125 150 b vdss - breakdown voltage(normalized) tj - junction temperature (oc) i d = 250 a 0.01 0.1 1 10 100 0. 2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source-to-drain voltage (v) t j = 125 o c 25 o c v gs = 0v - 55 o c 0 2 4 6 8 10 12 0 5 10 1 5 20 25 30 35 v gs - gate-to-source voltage (v) q g - gate charge (nc) i d =8a v ds =400v v ds =250v v ds =100v fig. 7 gate charge waveform pjp840 / PJF840 typical characteristics curves ( ta=25 , unle s s otherwise noted) fig.8 source-drain diode forward voltage fig.9 breakdown voltage vs junction temperature page. 4 0.8 0.9 1 1.1 1.2 - 5 0 -25 0 25 50 75 100 125 150 b vdss - breakdown voltage(normalized) tj - junction temperature (oc) i d = 250 a 0.01 0.1 1 10 100 0. 2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source-to-drain voltage (v) t j = 125 o c 25 o c v gs = 0v - 55 o c 0 2 4 6 8 10 12 0 5 10 1 5 20 25 30 35 v gs - gate-to-source voltage (v) q g - gate charge (nc) i d =8a v ds =400v v ds =250v v ds =100v november 24,2009-rev.00
page . 5 pjp840 / PJF840 copyright panjit international, inc 2009 the inf ormation pre sented in this document is believed to be a ccurate a nd reli a ble. the spe cif ication s a nd inf ormation here in are subject to change without notice. pan jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. pan jit products are not authorized for use in life support devices or systems. pan jit does not convey any license under its patent rights or rights of others. legal st a tement november 24,2009-rev.00
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